• Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth 

      Haakenaasen, Randi; Lauten, Oda; Selvig, Espen; Kongshaug, Kjell Ove; Røer, Eivind Jülke; Hansen, Runar Wattum (Peer reviewed; Journal article, 2019)
      We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and after growth ...
    • Critical thickness of MBE-grown Ga1-xInxSb (x < 0.2) on GaSb 

      Nilsen, Tron Arne; Breivik, Magnus; Selvig, Espen; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2009)
      Several Ga1−xInxSb layers, capped with 1 μm of GaSb, were grown on GaSb(0 0 1) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate ...
    • InAsSb/AlInAsSb nBn Photodiodes - A Basic Device Model 

      Marín Aguilera, Guillem (Master thesis, 2021)
      I dette arbeidet er bandstrukturen til en Unipolar Barrier Infrared Detector simulert. Designforslaget for sensoren er basert på en tidligere studie utført av forfatteren. Komponenten består av en heterostruktur som ...